C05 Silicon Drift Detectors for High Resolution, High Count Rate X-ray Spectroscopy at Room Temperature

An advanced Silicon Drift Detector (SDD) for X-ray spectroscopy designed and fabricated at the MPI semiconductor laboratory has the input transistor of the amplifying electronics integrated on the detector chip. That way the total capacitance of the detector/amplifier system is very small (200 fF) guaranteeing excellent energy resolution (147 eV FWHM at 5.9 keV, 10 mm≤, -10 °C) and extreme count rate capability (up to 10 6 incoming photons per sec). The elaborate process technology stands for a low leakage current level allowing operation at or close to room temperature. The new design of the Silicon Drift Detector Droplet (SD 3 ) offers an energy resolution of 128 eV (FWHM at 5.9 keV, 5 mm≤, -10 °C) that conventional detectors only obtain at liquid nitrogen cooling. The concept of Multichannel SDDs provides large sensitive areas up to cm≤ without losing the energy resolution and count rate properties of the single SDD cells.