论文信息 - 100+ GHz static divide-by-2 circuit in InP-DHBT technology

100+ GHz static divide-by-2 circuit in InP-DHBT technology

Static dividers in 135 GHz InP-DHBT technology have been designed, fabricated and measured. Circuits are operational from DC to 100 GHz. Due to limitations in available measurement equipment, investigation of the circuit operation beyond 100 GHz is not possible at this time, however, already, to the authors' knowledge, this is the highest toggling frequency reported in any static circuit in any technology. The circuit consumes about 150 mA from a single 5V supply and allocates a total area of 675 /spl times/ 900 /spl mu/m/sup 2/.

[1] D. Rensch,et al. 39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology , 1992, GaAs IC Symposium Technical Digest 1992.

[2] Hans-Martin Rein,et al. SiGe regenerative frequency divider operating up to 63 GHz , 1999 .

[3] Hans-Martin Rein,et al. Silicon bipolar integrated circuits for multigigabit-per-second lightwave communications , 1990 .

[4] J. Bock,et al. 42 GHz static frequency divider in a Si/SiGe bipolar technology , 1997, 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers.

[5] Y. K. Boegeman,et al. A low-power 72.8-GHz static frequency divider in AlInAs/InGaAs HBT technology , 2001 .