论文信息 - Current-induced breakdown in p-type collector AlGaAs/GaAs HBTs

Current-induced breakdown in p-type collector AlGaAs/GaAs HBTs

The current-induced breakdown phenomenon, which can occur in p-type collector heterojunction bipolar transistors (HBTs), is described. It is shown that the breakdown voltage across the p-type collector junction of HBTs decreases rapidly with increasing current density. The effects of collector structure, doping concentration, and layer thickness are analyzed. >

J. Chyi | H. Morkoç | D. Huang | G. Gao | J. Chen

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