Device Modeling and Characterization

Any reliable circuit designs is based on compact models able to describe accurately the behavior of the TFTs in a given technology. With our modeling, accurate simulation of analog circuits in a CAD platform is enabled and deeper insight in the underlying transport mechanisms is achieved. Thus, a physical model was developed in house that guarantees the continuity and the derivability among the different working regions, ensuring as well the symmetry between source and drain in the channel current. In this chapter, the implemented model will be explained first, and characterized afterwards.

[1]  M. Vissenberg,et al.  Theory of the field-effect mobility in amorphous organic transistors , 1998, cond-mat/9802133.

[2]  A. Ulman,et al.  Formation and Structure of Self-Assembled Monolayers. , 1996, Chemical reviews.

[3]  P. Blom,et al.  Unification of the hole transport in polymeric field-effect transistors and light-emitting diodes. , 2003, Physical review letters.

[4]  Arthur H. M. van Roermund,et al.  A tunable transconductor for analog amplification and filtering based on double-gate organic TFTs , 2011, 2011 Proceedings of the ESSCIRC (ESSCIRC).

[5]  Wim Dehaene,et al.  Unipolar Organic Transistor Circuits Made Robust by Dual-Gate Technology , 2011, IEEE Journal of Solid-State Circuits.

[6]  Xi Dai,et al.  Mean-field theory for the spin-ladder system , 1998 .

[7]  P. Lang,et al.  Structure-performance relationship in pentacene-based thin-film transistors , 2004, 2004 IEEE International Symposium on Industrial Electronics.

[8]  L. Colalongo,et al.  A Charge-Based OTFT Model for Circuit Simulation , 2009, IEEE Transactions on Electron Devices.

[9]  G. Gelinck,et al.  Dual-gate organic thin-film transistors , 2005 .

[10]  F. J. Garcia Sanchez,et al.  New procedure for the extraction of basic a-Si:H TFT model parameters in the linear and saturation regions , 2001 .

[11]  van Ahm Arthur Roermund,et al.  Design of a Voltage-controlled oscillator based on organic TFTs , 2012 .

[12]  E. Cantatore,et al.  Transport Physics and Device Modeling of Zinc Oxide Thin-Film Transistors Part I: Long-Channel Devices , 2011, IEEE Transactions on Electron Devices.