Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications †

InAlN/Al/GaN high electron mobility transistors (HEMTs) directly on Si with dynamic threshold voltage for steep subthreshold slope (<60 mV/dec) are demonstrated in this study, and attributed to displacement charge transition effects. The material analysis with High-Resolution X-ray Diffraction (HR-XRD) and the relaxation by reciprocal space mapping (RSM) are performed to confirm indium barrier composition and epitaxy quality. The proposed InAlN barrier HEMTs exhibits high ON/OFF ratio with seven magnitudes and a steep threshold swing (SS) is also obtained with SS = 99 mV/dec for forward sweep and SS = 28 mV/dec for reverse sweep. For GaN-based HEMT directly on Si, this study displays outstanding performance with high ON/OFF ratio and SS < 60 mV/dec behaviors.

[1]  Heng-Yuan Lee,et al.  Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors , 2015, IEEE Journal of the Electron Devices Society.

[2]  Xiang Gao,et al.  Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance , 2010, IEEE Electron Device Letters.

[3]  Wladek Walukiewicz,et al.  Universal bandgap bowing in group III nitride alloys , 2003 .

[4]  Yi Jie Ngoo,et al.  InxAl1-xN/AlN/GaN High Electron Mobility Transistor Structures on 200 mm Diameter Si(111) Substrates with Au-Free Device Processing , 2014 .

[5]  Dong Seup Lee,et al.  Impact of $\hbox{Al}_{2}\hbox{O}_{3}$ Passivation Thickness in Highly Scaled GaN HEMTs , 2012, IEEE Electron Device Letters.

[6]  J. Kavalieros,et al.  Experimental observation and physics of “negative” capacitance and steeper than 40mV/decade subthreshold swing in Al0.83In0.17N/AlN/GaN MOS-HEMT on SiC substrate , 2013, 2013 IEEE International Electron Devices Meeting.

[7]  M. Lee,et al.  Hetero-Tunnel Field-Effect-Transistors With Epitaxially Grown Germanium on Silicon , 2013, IEEE Transactions on Electron Devices.

[8]  Xiang Gao,et al.  Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With $ \hbox{Al}_{2}\hbox{O}_{3}$ Passivation , 2009, IEEE Electron Device Letters.

[9]  Eric Feltin,et al.  Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures (0.03 <= x <= 0.23) , 2008 .

[10]  M. Heuken,et al.  InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz , 2011, IEEE Electron Device Letters.

[11]  Min-Sheng Liao,et al.  In0.18Al0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact , 2017 .

[12]  Patrick Fay,et al.  245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment , 2011, IEEE Electron Device Letters.

[13]  M. H. Lee,et al.  Indium-Based Ternary Barrier High-Electron- Mobility Transistors on Si Substrate With High ON/OFF Ratio for Power Applications , 2015, IEEE Electron Device Letters.

[14]  M. H. Lee,et al.  Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics , 2015, IEEE Electron Device Letters.

[15]  Kevin J. Chen,et al.  Schottky source/drain Al2O3/InAlN/GaN MIS-HEMT with steep sub-threshold swing and high ON/OFF current ratio , 2011, 2011 International Electron Devices Meeting.

[16]  Stephen J. Pearton,et al.  GaN and ZnO-based materials and devices , 2012 .

[17]  Changhwan Shin,et al.  Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors , 2018, Nano Convergence.

[18]  Duk-Dong Lee,et al.  GaN thin films as gas sensors , 2003 .

[19]  G. Snider,et al.  Enhancement-Mode InAIN/AIN/GaN HEMTs With 10―12 A/mm Leakage Current and 1012 ON/OFF Current Ratio , 2011 .

[20]  V. Palankovski,et al.  Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region , 2013, IEEE Electron Device Letters.

[21]  Xiang Gao,et al.  3000-V 4.3-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ InAlN/GaN MOSHEMTs With AlGaN Back Barrier , 2012, IEEE Electron Device Letters.

[22]  Hyunsang Hwang,et al.  Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array , 2015, IEEE Electron Device Letters.