论文信息 - Dependence of MOSFETs threshold voltage variability on channel dimensions

Dependence of MOSFETs threshold voltage variability on channel dimensions

The dependence of the MOSFET threshold voltage variability on device geometry (width (W) and length (L)) has been studied from experimental data. Our results evidence, in agreement with other works, deviations from the Pelgrom's rule, especially in smaller technologies. TCAD simulations were also performed which further support the experimental data and provide physical information regarding the origin of such deviation. Finally, a new empirical model that assumes different impact of W and L in the device variability has been proposed, which reproduces the experimental results.

[1] Toshio Kumamoto,et al. Analysis of deviation from Pelgrom scaling law in Vth variability of pocket-implanted MOSFET , 2013, Proceedings of the IEEE 2013 Custom Integrated Circuits Conference.

[2] Terence B. Hook,et al. Comment on “Channel Length and Threshold Voltage Dependence of a Transistor Mismatch in a 32-nm HKMG Technology” , 2011 .

[3] Marcel J. M. Pelgrom,et al. Matching properties of MOS transistors , 1989 .

[4] T. Hook,et al. Analysis and Modeling of Threshold Voltage Mismatch for CMOS at 65 nm and Beyond , 2008, IEEE Electron Device Letters.

[5] Jie Ding,et al. Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review , 2014, Microelectronics and reliability.

[6] C. C. McAndrew,et al. Understanding MOSFET mismatch for analog design , 2002, Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285).

[7] Montserrat Nafría,et al. Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs , 2013, Microelectron. Reliab..