论文信息 - Single-event effects test results of 512MB SDRAMs

Single-event effects test results of 512MB SDRAMs

Single-event effect test results of new 512MB SDRAMs are reported in this paper. Effects characterized during testing include single-event upset, single-event latchup, and single-event functional interrupt. Upset cross-sections are compared with radiation test results of earlier generation SDRAMs as a feasibility assessment for use of these new technologies.

R. Koga | T. Langley | T. Morris

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