论文信息 - Subthreshold Characteristics of High-performance Inversion-type Enhancement-mode InGaAs NMOSFETs with ALD A12O3 as Gate Dielectric - 字舞流文

Subthreshold Characteristics of High-performance Inversion-type Enhancement-mode InGaAs NMOSFETs with ALD A12O3 as Gate Dielectric

D. Antoniadis | M. Lundstrom | P. Ye | Y. Xuan | D. Varghese | Y.Q. Wu | T. Shen | H. Pal | W.K. Wang | J.C.M. Hwang | M. A. Alam