Self-assembled InAs/GaAs quantum dot molecules with InxGa1−xAs strain-reducing layer
暂无分享,去创建一个
Y. Yu | L. R. Huang | P. Tian | D. X. Huang | P. Tian | D. Huang | Y. Yu | L. R. Huang
[1] K. Hinzer,et al. Coupling and entangling of quantum states in quantum dot molecules. , 2001, Science.
[2] Andreas Stintz,et al. 2.0 μm wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer , 2004 .
[3] C. Jagadish,et al. Quantum Dots and Nanowires Grown by Metal–Organic Chemical Vapor Deposition for Optoelectronic Device Applications , 2006, IEEE Journal of Selected Topics in Quantum Electronics.
[4] O. Schmidt,et al. Formation of lateral quantum dot molecules around self-assembled nanoholes , 2003 .
[5] R. Nötzel,et al. Ordering of quantum dot molecules by self-organization , 2005 .
[6] Dexiu Huang,et al. Performance study of InAs/GaAs quantum dot covered by graded InxGa1 − xAs layer , 2010 .
[7] Evolution of self-assembled lateral quantum dot molecules , 2007 .
[8] A. Forchel,et al. Control of vertically coupled InGaAs/GaAs quantum dots with electric fields. , 2005, Physical review letters.
[9] O. Schmidt,et al. Quantum light emission of two lateral tunnel-coupled (In,Ga)As/GaAs quantum dots controlled by a tunable static electric field. , 2006, Physical review letters.
[10] S. Kiravittaya,et al. Self‐Assembled Quantum Dot Molecules , 2009, Advanced materials.
[11] G. Salamo,et al. Configuration control of quantum dot molecules by droplet epitaxy , 2008 .
[12] E C Clark,et al. Direct observation of controlled coupling in an individual quantum dot molecule. , 2005, Physical review letters.