Challenges of Ta2O5 as High-k Dielectric for Nanoscale DRAMs

The present status, successes, challenges and future of Ta<sub>2 </sub>O<sub>5</sub>, and mixed Ta<sub>2</sub>O<sub>5</sub>-based high-k layers as active component in storage capacitors of nanoscale DRAMs are discussed. The engineering of new Ta<sub>2</sub>O<sub>5</sub>-based dielectrics (doped Ta<sub>2</sub>O<sub>5</sub> and multicomponent high-k dielectrics) as well as of metal/high-k interface in MIM capacitor configuration are identified as critical factors for further reduction of EOT value below 1 nm

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