论文信息 - Field induced reemission of electrons trapped in SiO2

Field induced reemission of electrons trapped in SiO2

A new form of hot electron injection and trapping in n-channel IGFET's is described, a necessary and sufficient condition for the emission of these trapped electrons is a reset pulse of negative gate and positive drain voltages. The effect of this trapping on device characteristics, reliability, and the proposed low-temperature operation of IGFET's is discussed.

J. Moll | L. Forbes | E. Sun | R. Alders

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