Silicon carbide doped Sb2Te3 nanomaterial for fast-speed phase change memory

Abstract In this study, doping of Sb 2 Te 3 with silicon carbide has been proposed to enhance the optical and electrical properties of Sb 2 Te 3 . The silicon carbide-doped Sb 2 Te 3 (Sb 2 Te 3 -SiC)-based phase change memory cell can be triggered by a 10 ns electric pulse, indicating its excellent electrical properties. Furthermore, femtosecond pulses are used to study the reversible phase transition processes. The large reflectivity ratio of Sb 2 Te 3 -SiC is beneficial for achieving distinguishable logical states in optical applications. X-ray diffraction and transmission electron microscopy results show the SiC doping plays an important role in refining the grain size of Sb 2 Te 3 , producing smaller grain.

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