Spatially resolved Raman spectroscopy evaluation of residual stresses in 3C-SiC layer deposited on Si substrates with different crystallographic orientations

Raman scattering studies were performed on hot-wall chemical vapor deposited (heteroepitaxial) silicon carbide (SiC) films grown on Si substrates with orientations of (1 0 0), (1 1 1), (1 1 0) and (2 1 1), respectively. Raman spectra suggested that good quality cubic SiC single crystals could be obtained on the Si substrate, independent of its crystallographic orientation. Average residual stresses in the epitaxially grown 3C-SiC films were measured with the laser waist focused on the epilayer surface. Tensile and compressive residual stresses were found to be stored within the SiC film and in the Si substrate, respectively. The residual stress exhibited a marked dependence on the orientation of the substrate. The measured stresses were comparable to the thermal stress deduced from elastic deformation theory, which demonstrates that the large lattice mismatch between cubic SiC and Si is effectively relieved by initial carbonization. The confocal configuration of the optical probe enabled a stress evaluation along the cross-section of the sample, which showed maximum tensile stress magnitude at the SiC/Si interface from the SiC side, decreasing away from the interface in varied rate for different crystallographic orientations. Defocusing experiments were used to precisely characterize the geometry of the laser probe in 3C-SiC single crystal. Based on this knowledge, a theoretical convolution of the in-depth stress distribution could be obtained, which showed a satisfactory agreement with stress values obtained by experiments performed on the 3C-SiC surface.

[1]  Andrew J. Steckl,et al.  SiC rapid thermal carbonization of the (111)Si semiconductor‐on‐insulator structure and subsequent metalorganic chemical vapor deposition of GaN , 1996 .

[2]  J. Sprague,et al.  ‘‘Buffer‐layer’’ technique for the growth of single crystal SiC on Si , 1984 .

[3]  M. Mehregany,et al.  Quantitative evaluation of biaxial strain in epitaxial 3C-SiC layers on Si(100) substrates by Raman spectroscopy , 2002 .

[4]  I. Pfaffeneder,et al.  Breakdown field in vapor‐grown silicon carbide p‐n junctions , 1977 .

[5]  Herbert A. Will,et al.  Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices , 1983 .

[6]  A. Tagantsev,et al.  Phase transitions and strain-induced ferroelectricity in SrTiO3 epitaxial thin films , 2000 .

[7]  S. Ustin,et al.  Structural defects in 3C–SiC grown on Si by supersonic jet epitaxy , 1999 .

[8]  S. Nishino,et al.  CVD growth of 3C–SiC on various orientations of Si substrates for the substrate of nitride semiconductors , 2003 .

[9]  Hiroshi Harima,et al.  Raman Investigation of SiC Polytypes , 1997 .

[10]  J. Dow,et al.  Lattice‐matching SiC substrates with GaN , 1996 .

[11]  A. Gobbi,et al.  Strain-dependent optical emission in In1-xGaxAs/InP quantum wells , 2001 .

[12]  K. Endo,et al.  Raman scattering of SiC: Estimation of the internal stress in 3C-SiC on Si , 1987 .

[13]  H. Nagasawa,et al.  Heteroepitaxial Growth and Characteristics of 3C-SiC on Large-Diameter Si(001) Substrates , 2002 .

[14]  A. Zangwill,et al.  Morphological Transitions in Solid Expitaxial Overlayers , 1987 .

[15]  D. N. Batchelder,et al.  Confocal Raman Microspectroscopy through a Planar Interface , 2001 .

[16]  Interfacial strain in 3C‐SiC/Si(100) pseudo‐substrates for cubic nitride epitaxy , 2003 .

[17]  A. Mitsuishi,et al.  Characterization of the free‐carrier concentrations in doped β‐SiC crystals by Raman scattering , 1987 .

[18]  M. Mehregany,et al.  Mechanical properties of 3C silicon carbide , 1992 .

[19]  Koji Nishio,et al.  Heteroepitaxial growth of (111) 3C–SiC on well-lattice-matched (110) Si substrates by chemical vapor deposition , 2004 .

[20]  D. Ferry High-field transport in wide-band-gap semiconductors , 1975 .

[21]  W. J. Choyke,et al.  Raman scattering studies of chemical‐vapor‐deposited cubic SiC films of (100) Si , 1988 .

[22]  Ernst Obermeier,et al.  High temperature piezoresistive β-SiC-on-SOI pressure sensor with on chip SiC thermistor , 1999 .

[23]  Theoretical investigations of a highly mismatched interface: SiC/Si(001) , 2003, 0709.1591.