论文信息 - Implementation of veriloga GaN HEMT model to design RF switch

Implementation of veriloga GaN HEMT model to design RF switch

GaN HEMT model has been implemented in designing of RF switch through VerilogA. The VerilogA model is formed by experimental data as obtained from DC and RF characteristics of the HEMT. A look-up-table based VerilogA model has been prepared to simulate the RF switch in Cadence's spectre. The simulated value of the switch property i.e. isolation and insertion loss is found to be −40 dB to −35 dB and −0.5 dB to −2.5 dB, respectively in the 0.5–2.5 GHz frequency range. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:1765–1768, 2015

Shubhankar Majumdar | Ankush Bag | Dhrubes Biswas

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