Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

In this letter, we studied the forward bias gate breakdown mechanism on enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors. To the best of our knowledge, it is the first time that the temperature dependence of the forward gate breakdown has been characterized. We report for the first time on the observation of a positive temperature dependence, i.e., a higher temperature leads to a higher gate breakdown voltage. Such unexpected behavior is explained by avalanche breakdown mechanism: at a high positive gate bias, electron/hole pairs are generated in the depletion region at the Schottky metal/p-GaN junction. Furthermore, at a high gate bias but before the catastrophic gate breakdown, a light emission was detected by a emission microscopy measurement. This effect indicates an avalanche luminescence, which is mainly due to the recombination of the generated electron/hole pairs.

[1]  Gaudenzio Meneghesso,et al.  Electron and hole-related luminescence processes in gate injection transistors , 2010 .

[2]  Michael S. Shur,et al.  TEMPERATURE DEPENDENCE OF IMPACT IONIZATION IN ALGAN-GAN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS , 1998 .

[3]  Yung C. Liang,et al.  Phenomenon of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs , 2015, IEEE Transactions on Electron Devices.

[4]  Ho-Young Cha,et al.  High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-${\rm SiN}_{x}$ /RF-Sputtered-${\rm HfO}_{2}$ , 2014, IEEE Electron Device Letters.

[5]  M. Geis,et al.  Temperature dependence of the breakdown voltage for reverse-biased GaN p–n–n+ diodes , 2001 .

[6]  J. Wurfl,et al.  Normally-off high-voltage p-GaN gate GaN HFET with carbon-doped buffer , 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

[7]  K.J. Chen,et al.  Monolithic integration of lateral field-effect rectifier with normally-off HEMT for GaN-on-Si switch-mode power supply converters , 2008, 2008 IEEE International Electron Devices Meeting.

[8]  Guido Groeseneken,et al.  The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate , 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

[9]  G. Meneghesso,et al.  Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate , 2012, IEEE Electron Device Letters.

[10]  Baoshun Zhang,et al.  GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric , 2015, IEEE Electron Device Letters.

[11]  J. Roberts,et al.  Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO2 tunnel dielectrics , 2010, 2010 International Electron Devices Meeting.

[12]  M. Shur,et al.  Avalanche breakdown and breakdown luminescence in p-/spl pi/-n GaN diodes , 1998 .

[13]  S. Sze,et al.  Physics of Semiconductor Devices: Sze/Physics , 2006 .

[14]  Guido Groeseneken,et al.  Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs , 2015, 2015 IEEE International Reliability Physics Symposium.

[15]  Jian Jang Huang,et al.  Enhancement-Mode GaN-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type GaN Cap Layer , 2014, IEEE Transactions on Electron Devices.

[16]  Tetsuzo Ueda,et al.  Reliability issues in GaN and SiC power devices , 2014, 2014 IEEE International Reliability Physics Symposium.

[17]  H. Miyamoto,et al.  A normally-off GaN FET with high threshold voltage uniformity using a novel piezo neutralization technique , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

[18]  U. Chung,et al.  p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current , 2013, IEEE Electron Device Letters.

[19]  Vladimir Dmitriev,et al.  ELECTRIC BREAKDOWN IN GAN P-N JUNCTIONS , 1996 .

[20]  H. Ishida,et al.  Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation , 2007, IEEE Transactions on Electron Devices.