论文信息 - On the role of defect charge state in the stability of point defects in silicon

On the role of defect charge state in the stability of point defects in silicon

Abstract Defect annealing in 1-MeV electron-irradiated, phosphorus-doped silicon is studied. Charge state effects are explored directly using a p-n junction structure. A defect state which is associated with the E center (phosphorus-vacancy pair) is found to disappear at approximately 150°C with an activation energy of 0.95 ± 0.03 eV in the neutral charge state and 1.25 ± 0.05 eV in the negative charge state.

[1] G. Wertheim. Temperature-Dependent Defect Production in Bombardment of Semiconductors , 1959 .

[2] G. D. Watkins,et al. Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-E Center , 1964 .

[3] H. Saito,et al. Nature of Radiation Defects in Silicon Single Crystals , 1963 .

[4] L. Kimerling,et al. Annealing of Electron-Irradiated n-Type Silicon. I. Donor Concentration Dependence , 1971 .

[5] J. W. Mackay,et al. LOW-TEMPERATURE ANNEALING STUDIES IN Ge , 1959 .

[6] H. Saito,et al. Recombination Centers in Gamma‐Irradiated Silicon , 1966 .

[7] J. H. Crawford,et al. Effect of Impurities on the Annealing Behavior of Irradiated Silicon , 1967 .

[8] D. Lang. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors , 1974 .

[9] H. Saito,et al. The Interactions of Point Defects with Impurities in Silicon , 1969 .