论文信息 - 1/f noise measurements for characterizing multispot low‐Ohmic contacts

1/f noise measurements for characterizing multispot low‐Ohmic contacts

The patchiness of contacts can be determined from measurements of 1/f noise and contact resistance on a number of contacts of different diameters made by the same method. If a contact consists of k conducting spots with average radius a, k and a can be determined if the distance between the spot centers is at least 2.5 times the spot diameter. Using the developed multispot contact model, the results of the 1/f noise analysis are in good agreement with multispot parameters obtained from microscopic investigations.

L.K.J. Vandamme | L. Vandamme | Rudy Tijburg | R. Tijburg

[1] L.K.J. Vandamme. 1 f{hook} noise in homogeneous single crystals of III-V compounds , 1974 .

[2] J. L. Vossen,et al. Screening of metal film defects by current noise measurements , 1973 .

[3] J. P. Nougier,et al. Metal semiconductor contact: Resistivity and noise , 1973 .

[4] R. Holm. Electric contacts; theory and application , 1967 .

[5] L. Vandamme. 1/f noise of point contacts affected by uniform films , 1974 .

[6] F. Hooge. Discussion of recent experiments on 1/ƒ noise , 1972 .

[7] B. Pruniaux. Transport Properties of the Gold Germanium Gallium Arsenide Metal Semiconductor System , 1971 .