Hydrogen induced positive charge generation in gate oxides

This article investigates the H2-anneal induced positive charge generation in the gate oxide of metal-oxide-semiconductor field-effect transistors fabricated by a submicron complementary metal-oxide-semiconductor process. A significant number (∼1012 cm−2) of fixed and mobile positive charges are generated at 450 °C. Properties (reactivity, electrical and thermal stability) of these positive charges are compared with the positive charges observed in the buried oxide of silicon-on-insulator devices. The differences in these two are investigated, in terms of their transportation time across the oxide, uniformity and sources of hydrogen. Attention is paid to the role played by boron in the generation and the possible connection between the positive species observed here and the defects responsible for the positive bias temperature instability. Efforts are made to explain the difference in reactivity between the H2-anneal induced positive species and the hydrogenous species released by irradiation or electrica...

[1]  E. V. D. Drift,et al.  Hydrogen induced donor‐type Si/SiO2 interface states , 1994 .

[2]  Klein,et al.  Hydrogen permeability in thermally grown films of SiO2 on silicon substrates. , 1993, Physical review. B, Condensed matter.

[3]  William Eccleston,et al.  Positive bias temperature instability in MOSFETs , 1998 .

[4]  James H. Stathis,et al.  Identification of an interface defect generated by hot electrons in SiO2 , 1992 .

[5]  Daniel M. Fleetwood,et al.  1/f noise, hydrogen transport, and latent interface-trap buildup in irradiated MOS devices , 1997 .

[6]  A. Stesmans,et al.  Positive charging of thermal SiO2/(100)Si interface by hydrogen annealing , 1998 .

[7]  G. Groeseneken,et al.  BEHAVIOR OF HOT HOLE STRESSED SIO2/SI INTERFACE AT ELEVATED TEMPERATURE , 1998 .

[8]  D. Dimaria,et al.  Defect generation under substrate-hot-electron injection into ultrathin silicon dioxide layers , 1999 .

[9]  Shashi P. Karna,et al.  Irradiation response of mobile protons in buried SiO/sub 2/ films , 1997 .

[10]  R. K. Lawrence,et al.  Post-irradiation behavior of the interface state density and the trapped positive charge , 1990 .

[11]  Guido Groeseneken,et al.  Mechanism for the generation of interface state precursors , 2000 .

[12]  James H. Stathis,et al.  Interface states induced by the presence of trapped holes near the silicon–silicon‐dioxide interface , 1995 .

[13]  Ionisation and trapping of hydrogen at SiO2 interfaces , 1999 .

[14]  T. Suzuki,et al.  Boron and phosphorus diffusion through an SiO2 layer from a doped polycrystalline Si source under various drive-in ambients , 1975 .

[15]  Dennis B. Brown,et al.  Time dependence of interface trap formation in MOSFETs following pulsed irradiation , 1988 .

[16]  James Stasiak,et al.  Trap creation in silicon dioxide produced by hot electrons , 1989 .

[17]  James H. Stathis,et al.  Oxide scaling limit for future logic and memory technology , 1999 .

[18]  Y. Sato,et al.  The process dependence on positive bias temperature aging instability of p/sup +/(B) polysilicon-gate MOS devices , 1993 .

[19]  J. Zhang,et al.  A comparative study of the electron trapping and thermal detrapping in SiO2 prepared by plasma and thermal oxidation , 1992 .

[20]  D. Fleetwood,et al.  Non-volatile memory device based on mobile protons in SiO2 thin films , 1997, Nature.

[21]  R. Degraeve,et al.  Degradation of oxides and oxynitrides under hot hole stress , 2000 .

[22]  H. L. Hughes,et al.  H/sup +/ motion in SiO/sub 2/: incompatible results from hydrogen-annealing and radiation models , 1998 .

[23]  The effects of radiation-induced defects on H + transport in SiO 2 , 1999 .

[24]  A. Stesmans,et al.  Relationship between oxide density and charge trapping in SiO2 films , 1999 .

[25]  H. Iwai,et al.  Interface state generation under long-term positive-bias temperature stress for a p/sup +/ poly gate MOS structure , 1989 .

[26]  G. Groeseneken,et al.  Direct and post-injection oxide and interface trap generation resulting from low-temperature hot-electron injection , 1993 .

[27]  A. Stesmans,et al.  Positive charging of buried SiO2 by hydrogenation , 1994 .

[28]  Robert E. Stahlbush,et al.  Near interface H+ trapping and its influence on H+ transport in hydrogenated Unibond buried oxides , 2000 .

[29]  David L. Griscom,et al.  Formation of interface traps in MOSFETs during annealing following low temperature irradiation , 1988 .

[30]  C. R. Helms,et al.  The silicon-silicon dioxide system: Its microstructure and imperfections , 1994 .

[31]  D. J. Breed.  Non-ionic room temperature instabilities in MOS devices , 1974 .

[32]  Tso-Ping Ma,et al.  Interface trap transformation in radiation or hot-electron damaged MOS structures , 1989 .

[33]  D. Fleetwood,et al.  The effect of near-interface network strain on proton trapping in SiO/sub 2/ , 1999 .

[34]  P. Balk,et al.  Elimination and Generation of Si ‐ SiO2 Interface Traps by Low Temperature Hydrogen Annealing , 1988 .