Design and analysis of novel high-gain and broad-band GaAs pHEMT MMIC distributed amplifiers with traveling-wave gain stages

Using the concept of traveling-wave gain stages, novel GaAs pseudomorphic high electron-mobility transistor monolithic-microwave integrated-circuit (MMIC) distributed amplifiers (DAs) are demonstrated to achieve high gain and over several octaves of bandwidth performance simultaneously for microwave and millimeter-wave frequency applications. The cascaded single-stage distributed amplifier (CSSDA) is used as traveling-wave gain stages to improve the gain performance of the conventional distributed amplifier (CDA). By adopting the low-pass filter topology between the CDA and CSSDA and tuning the gain shape of CDA and CSSDA separately, a broad-band and high-gain DA, called CDA-CSSDA-2, was accomplished. The detailed design equations are derived for the broad-band matching design of this CDA-CSSDA-2. Two other MMICs, namely, a two-stage CSSDA called 2-CSSDA, and another two-stage design called CDA-CSSDA-1, are also included in this paper. This CDA-CSSDA-2 achieves 22/spl plusmn/1.5-dB small-signal gain from 0.1 to 40 GHz with a chip size of 1.5/spl times/2 mm/sup 2/. It also produces a gain-bandwidth product of 503 GHz, which is the highest among all reported GaAs-based DAs. The flat group delay also demonstrates the feasibility of this design for future digital optical communications and broad-band pulse applications.

[1]  Mitchai Chongcheawchamnan,et al.  Broadband amplification in CMOS technology using cascaded single-stage distributed amplifier , 2002 .

[2]  M.V. Le,et al.  A 17 dB gain, 0.1-70 GHz InP HEMT amplifier IC , 1994, Proceedings of IEEE International Solid-State Circuits Conference - ISSCC '94.

[3]  James B. Beyer,et al.  MESFET Distributed Amplifier Design Guidelines , 1984 .

[4]  Duc Chu,et al.  50 GHz high output voltage distributed amplifiers for 40 Gb/s EO modulator driver application , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

[5]  Saeed Mohammadi,et al.  Design optimization and characterization of high-gain GaInP/GaAs HBT distributed amplifiers for high-bit-rate telecommunication , 2000 .

[6]  W. De Raedt,et al.  GaAs and InP-based dual-gate HEMTs for high-gain MMIC amplifiers , 1995, Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95.

[7]  J.M. Carroll,et al.  0.25/spl mu/m pHEMT 40Gb/s E/O modulator drivers , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

[8]  Barry R. Allen,et al.  A 6-21-GHz monolithic HEMT 2*3 matrix distributed amplifier , 1993 .

[9]  Michael Schlechtweg,et al.  Two-stage ultrabroadband driver for optical modulators , 2000 .

[10]  M. Berwick,et al.  Analysis of the performance of four-cascaded single-stage distributed amplifiers , 2000 .

[11]  N. Hara,et al.  45 GHz distributed amplifier with a linear 6-Vp-p output for a 40 Gb/s LiNbO/sub 3/ modulator driver circuit , 2001, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191).

[12]  P. Gamand Analysis of the oscillation conditions in distributed amplifiers , 1989 .

[13]  A. M. Pavio,et al.  A Distributed 1-12 GHz Dual-Gate FET Mixer , 1986, 1986 IEEE MTT-S International Microwave Symposium Digest.

[14]  R. Lai,et al.  InP and GaAs components for 40 Gbps applications , 2001, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191).

[15]  R. Hajji,et al.  40-GHz MMICs for optical modulator driver applications , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

[16]  J. W. Archer,et al.  Ultra-wideband, high-gain GaAs and InP-MMIC amplifiers , 2000, 2000 Asia-Pacific Microwave Conference. Proceedings (Cat. No.00TH8522).

[17]  R. Lefevre,et al.  DC-92 GHz ultra-broadband high gain InP HEMT amplifier with 410 GHz gain-bandwidth product , 2002 .

[18]  Andreas Leven,et al.  InP D-HBT IC's for 40 Gb/s and higher bitrate lightwave transceivers , 2001 .

[19]  W. Titus,et al.  2-26 GHz MMIC frequency converter , 1988, 10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988..

[20]  Bal S. Virdee,et al.  Bandwidth and Efficiency Improvements in Cascaded Single-Stage Distributed Amplifier , 2002, 2002 32nd European Microwave Conference.

[21]  G.S. Dow,et al.  A wide band distributed dual gate HEMT mixer , 1988, 10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988..

[22]  M. Rodwell,et al.  112-GHz, 157-GHz, and 180-GHz InP HEMT traveling-wave amplifiers , 1998 .

[23]  R.A. Pucel,et al.  A monolithic GaAs 1 - 13-GHz traveling-wave amplifier , 1982, IEEE Transactions on Electron Devices.

[24]  C.F. Campbell,et al.  A GaAs MHEMT distributed amplifier with 300-GHz gain-bandwidth product for 40-Gb/s optical applications , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

[25]  Jia Yi Liang,et al.  A proposal of a broadband high gain block using cascaded single-stage distributed amplifiers , 1995, Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95.

[26]  L. D. Reynolds,et al.  A Monolithic GaAs 1-13-GHz Traveling-Wave Amplifier , 1982 .