Submicron AlInAs/InGaAs HBT with 160 GHz f/sub T/ at 1 mA collector current

We have demonstrated a submicron heterojunction bipolar transistor (SHBT) with a unity current gain cutoff frequency (f/sub t/) of 160 GHz at the very low current level of 1 mA. The AlInAs/InGaAs SHBT has a thin collector and uses stepper lithography with 0.1 /spl mu/m registration accuracy to reduce the parasitic elements that typically limit the performance of small transistors. The same device has 100 GHz f/sub t/ at 200 /spl mu/A. The result substantially improves upon the cutoff frequency of submicron compound semiconductor devices. The technology is appropriate for high speed, low power, high-density circuits.

[1]  J. Notthoff,et al.  69 GHz frequency divider with a cantilevered base InP DHBT , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

[2]  T. Tamamura,et al.  An 0.03 μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f/sub T/ and 2 S/mm extrinsic transconductance , 1999, IEEE Electron Device Letters.

[3]  D. Mensa,et al.  Transferred-substrate HBTs with 250 GHz current-gain cutoff frequency , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

[4]  H. Leier,et al.  Reduction of base-collector capacitance in InP/InGaAs HBT's using a novel double polyimide planarization process , 1998, IEEE Electron Device Letters.

[5]  Mark J. W. Rodwell,et al.  66 GHz static frequency divider in transferred-substrate HBT technology , 1999, 1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001).

[6]  M. Sokolich,et al.  Fabrication of InP-based HBT integrated circuits , 2000, Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107).

[7]  D. Rensch,et al.  39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology , 1992, GaAs IC Symposium Technical Digest 1992.

[8]  K. Washio,et al.  130-GHz f/sub T/ SiGe HBT technology , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[9]  M. Hafizi.  Submicron, fully self-aligned HBT with an emitter geometry of 0.3 μm , 1997, IEEE Electron Device Letters.