Transient simulations of a resonant tunneling diode

Stationary and transient simulations of a resonant tunneling diode in the ballistic regime are presented. The simulated model consists in a set of Schrodinger equations for the wave functions coupled to the Poisson equation for the electrostatic interaction. The Schrodinger equations are applied with open boundary conditions that model continuous injection of electrons from reservoirs. Automatic resonance detection enables reduction of the number of Schrodinger equations to be solved. A Gummel type scheme is used to treat the Schrodinger–Poisson coupling in order to accelerate the convergence. Stationary I–V characteristics are computed and the transient regime between two stationary states is simulated.

[1]  Supriyo Datta,et al.  A simple kinetic equation for steady-state quantum transport , 1990 .

[2]  Anton Arnold,et al.  Numerically Absorbing Boundary Conditions for Quantum Evolution Equations , 1998, VLSI Design.

[3]  Yu,et al.  Multiband treatment of quantum transport in interband tunnel devices. , 1992, Physical review. B, Condensed matter.

[4]  P. Degond,et al.  On a one-dimensional Schrödinger-Poisson scattering model , 1997 .

[5]  Datta,et al.  Nonequilibrium Green's-function method applied to double-barrier resonant-tunneling diodes. , 1992, Physical review. B, Condensed matter.

[6]  A. Majda,et al.  Absorbing boundary conditions for the numerical simulation of waves , 1977 .

[7]  Quantitative resonant tunneling spectroscopy: Current-voltage characteristics of precisely characterized resonant tunneling diodes , 1989 .

[8]  R. Landauer.  Electrical resistance of disordered one-dimensional lattices , 1970 .

[9]  L. Esaki,et al.  Tunneling in a finite superlattice , 1973 .

[10]  A. V. Popov,et al.  Implementation of transparent boundaries for numerical solution of the Schrödinger equation , 1991 .

[11]  Bruno Ricco,et al.  Physics of resonant tunneling. The one-dimensional double-barrier case , 1984 .

[12]  G. Bastard,et al.  Tunnelling and relaxation in semiconductor double quantum wells , 1997 .

[13]  Ferry,et al.  Self-consistent study of the resonant-tunneling diode. , 1989, Physical review. B, Condensed matter.

[14]  H. Gummel.  A self-consistent iterative scheme for one-dimensional steady state transistor calculations , 1964 .

[15]  M. Fischetti.  Theory of electron transport in small semiconductor devices using the Pauli master equation , 1998 .

[16]  Gerhard Klimeck,et al.  Single and multiband modeling of quantum electron transport through layered semiconductor devices , 1997 .

[17]  Gerhard Klimeck,et al.  Quantitative simulation of a resonant tunneling diode , 1997, Journal of Applied Physics.

[18]  J. Harris,et al.  Effect of Si doping in AlAs barrier layers of AlAs‐GaAs‐AlAs double‐barrier resonant tunneling diodes , 1989 .

[19]  Jensen,et al.  Lattice Weyl-Wigner formulation of exact many-body quantum-transport theory and applications to novel solid-state quantum-based devices. , 1990, Physical review. B, Condensed matter.

[20]  Büttiker,et al.  Four-terminal phase-coherent conductance. , 1986, Physical review letters.

[21]  F. Chevoir,et al.  Scattering-assisted tunneling in double-barrier diodes: Scattering rates and valley current. , 1993, Physical review. B, Condensed matter.

[22]  William R. Frensley,et al.  Boundary conditions for open quantum systems driven far from equilibrium , 1990 .