论文信息 - Influence of the thermal treatment on the optical and structural properties of 1.3 μm emitting LP-MOVPE grown InAs/GaAs quantum dots - 字舞流文

Influence of the thermal treatment on the optical and structural properties of 1.3 μm emitting LP-MOVPE grown InAs/GaAs quantum dots

I. Sagnes | A. Mereuta | G. Patriarche | G. Saint-Girons | J. Gerard

[1] I. Sagnes,et al. Performance comparison of strained InGaNAs/GaAs and InGaAs/GaAs QW laser diodes grown by MOVPE , 2000 .

[2] W. S. Hobson,et al. Room-temperature 1.3 mum emission from InAs quantum dots grown by metal organic chemical vapor deposition , 1999 .

[3] G. Park,et al. Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers , 1999, IEEE Photonics Technology Letters.

[4] Diana L. Huffaker,et al. Lasing from InGaAs/GaAs quantum dots with extended wavelength and well-defined harmonic-oscillator energy levels , 1998 .

[5] Dieter Bimberg,et al. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition , 1997 .

[6] Brian Thibeault,et al. Band‐gap engineered digital alloy interfaces for lower resistance vertical‐cavity surface‐emitting lasers , 1993 .

[7] Ichiro Ogura,et al. Reduction in the series resistance of the distributed Bragg reflector in vertical cavities by using quasi‐graded superlattices at the heterointerfaces , 1993 .