GaAs HBT class-E amplifiers for 2-GHz mobile applications

This paper discusses practical design aspects of integrated class-E power amplifiers. The described design concepts were applied to the realization of a two-stage GaAs HBT amplifier targeted for WCDMA operation. The fabricated MMIC was packaged in a 12-lead 3/spl times/3 mm/sup 2/ micro lead frame package. The package was mounted onto an FR4 test board containing components needed for matching and bias networks. At the design frequency of 1.95 GHz, the power amplifier delivered an output power of 27.0 dBm with collector and power-added efficiencies (PAE) of 74.5% and 62.5%, respectively. The PAE remains over 60% in the frequency range of 1.7-2.0 GHz.

[1]  N. O. Sokal.  Class-E switching-mode high-efficiency tuned RF/microwave power amplifier: improved design equations , 2000, 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017).

[2]  E. Jarvinen,et al.  Bias circuits for GaAs HBT power amplifiers , 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

[3]  Frederick H. Raab,et al.  Idealized operation of the class E tuned power amplifier , 1977 .

[4]  Dusan M. Milosevic,et al.  On the feasibility of application of class E RF power amplifiers in UMTS , 2003, Proceedings of the 2003 International Symposium on Circuits and Systems, 2003. ISCAS '03..