Nonlinear effects of TSV and harmonic generation

The nonlinear effects of through-silicon via (TSV) is first demonstrated and analyzed in this paper. TSV constructs metal-insulator-semiconductor (MIS) structure, which generates depletion region depending on the TSV bias voltage. Due to the voltage-dependent capacitance of TSV, it shows nonlinear effects and harmonic generations both at the transmitted and the coupled signal. The SPICE-compatible TSV capacitance model is proposed and is used for circuit simulation, which demonstrates TSV nonlinearity. Also TSV nonlinearity is measured by TSV test vehicle, which is manufactured by Hynix Semiconductor Inc. using via-last TSV process.

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