A review of DC extraction methods for MOSFET series resistance and mobility degradation model parameters

Abstract The performance of modern MOSFETs is limited by the presence of parasitic series resistances and mobility degradation. This article reviews and assesses 18 of the extraction methods currently used to determine the values of parasitic series resistances and mobility degradation from the measured drain current. The methods are separated in 3 groups: seven different methods that use the transfer characteristics of several devices having different mask channel lengths; five methods based on a single device with different drain and gate bias; six methods which account for the asymmetry between drain and source resistance.

[1]  Sorin Cristoloveanu,et al.  A review of electrical characterization techniques for ultrathin FDSOI materials and devices , 2016 .

[2]  Juin J. Liou,et al.  A new integration-based procedure to separately extract series resistance and mobility degradation in MOSFETs , 2009 .

[3]  Yi-Zen Lo,et al.  A New Method for Accurate Extraction of Source Resistance and Effective Mobility in Nanoscale Multifinger nMOSFETs , 2015, IEEE Transactions on Electron Devices.

[4]  Adelmo Ortiz-Conde,et al.  Extraction of Mobility Degradation and Source-and-Drain Resistance in MOSFETs , 2010 .

[5]  Quentin Rafhay,et al.  New Y-function based MOSFET parameter extraction method from weak to strong inversion range , 2016 .

[6]  Colin C. McAndrew,et al.  A simple physical extraction method for R/sub D/-R/sub S/ of asymmetric MOSFETs , 1999, ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307).

[7]  Adelmo Ortiz-Conde,et al.  A DC Method to Extract Mobility Degradation and Series Resistance of Multifinger Microwave MOSFETs , 2016, IEEE Transactions on Electron Devices.

[8]  Noureddine Maouhoub,et al.  Characterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin OxideN-Channel MOSFET , 2011 .

[9]  P. R. Karlsson,et al.  An efficient method for determining threshold voltage, series resistance and effective geometry of MOS transistors , 1996 .

[10]  Krzysztof Kucharski,et al.  A simple method for characterization of MOSFET serial resistance asymmetry , 2015, Proceedings of the 2015 International Conference on Microelectronic Test Structures.

[11]  Yang-Hua Chang,et al.  A self-consistent extraction procedure for source/drain resistance in MOSFETs , 2011, Microelectron. Reliab..

[12]  Sebastien Haendler,et al.  Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction , 2015 .

[13]  R. Torres-Torres,et al.  An alternative method to determine effective channel length and parasitic series resistance of LDD MOSFET's , 2002, Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611).

[14]  Jun Tae Jang,et al.  Modeling and Separate Extraction Technique for Gate Bias-Dependent Parasitic Resistances and Overlap Length in MOSFETs , 2015, IEEE Transactions on Electron Devices.

[15]  D. Schroder.  Semiconductor Material and Device Characterization, 3rd Edition , 2005 .

[16]  Emre Alptekin,et al.  Understanding short channel mobility degradation by accurate external resistance decomposition and intrinsic mobility extraction , 2015 .

[17]  Juin J. Liou,et al.  Extraction of MOSFET Model Parameters from the Measured Source-to-drain Resistance , 2009 .

[18]  Mojtaba Joodaki.  An extended drain current conductance extraction method and its application to DRAM support and array devices , 2009 .

[19]  J.-P. Raskin,et al.  RF-extraction methods for MOSFET series resistances: A fair comparison , 2008, 2008 7th International Caribbean Conference on Devices, Circuits and Systems.

[20]  Dong Myong Kim,et al.  Avalanche Hot Source Method for Separated Extraction of Parasitic Source and Drain Resistances in Single Metal-Oxide-Semiconductor Field Effect Transistors , 2012 .

[21]  Hee-Gook Lee,et al.  A simple and accurate method to measure the threshold voltage of an enhancement-mode MOSFET , 1982, IEEE Transactions on Electron Devices.

[22]  D. M. Kim,et al.  Modeling and extraction of gate bias-dependent parasitic source and drain resistances in MOSFETs , 2003 .

[23]  Antonio Cerdeira,et al.  On the series resistance in staggered amorphous thin film transistors , 2016, Microelectron. Reliab..

[24]  M.I.H. King,et al.  A Simple Method to Extract the Parasitic Resistances from a Single MOSFET using Measurements of Small-Signal Conductances , 1995, ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference.

[25]  Pin Su,et al.  Series Resistance and Mobility Extraction Method in Nanoscale MOSFETs , 2009 .

[26]  M. Joodaki.  On the extraction of the external drain and source resistors and effective channel length in Si-MOSFET , 2015 .

[27]  Juan Bautista Roldán,et al.  An in-depth study on WENO-based techniques to improve parameter extraction procedures in MOSFET transistors , 2015, Math. Comput. Simul..

[28]  I. Sankin,et al.  1.74 mΩcm2, High-Voltage 4H-SiC Vertical-Channel JFETs for High-Power Applications , 2006, 2006 64th Device Research Conference.

[29]  Sung-Jin Choi,et al.  Hybrid Open Drain Method and Fully Current-Based Characterization of Asymmetric Resistance Components in a Single MOSFET , 2016, IEEE Transactions on Electron Devices.

[30]  A. Oates,et al.  A Simple Series Resistance Extraction Methodology for Advanced CMOS Devices , 2011, IEEE Electron Device Letters.

[31]  Dong Myong Kim,et al.  Modeling and Separate Extraction of Gate-Bias- and Channel-Length-Dependent Intrinsic and Extrinsic Source–Drain Resistances in MOSFETs , 2011, IEEE Electron Device Letters.

[32]  Juin J. Liou,et al.  Revisiting MOSFET threshold voltage extraction methods , 2013, Microelectron. Reliab..

[33]  Juin J. Liou,et al.  An improved method for extracting the difference between drain and source resistances in MOSFETs , 1996 .

[34]  Yong Yoon Kim,et al.  Separate extraction of source/drain resistances in ultra-thin body SOI MOSFET with underlap structure = SOI 기반의 언더랩 구조를 가지는 MOSFET의 소스/드레인 저항 분리 추출에 관한 연구 , 2015 .

[35]  Gerard Ghibaudo,et al.  New method for the extraction of MOSFET parameters , 1988 .

[36]  Constantin Bulucea,et al.  Physics, Technology, and Modeling of Complementary Asymmetric MOSFETs , 2010, IEEE Transactions on Electron Devices.

[37]  D. Chan,et al.  A novel single-device DC method for extraction of the effective mobility and source-drain resistances of fresh and hot-carrier degraded drain-engineered MOSFET's , 1998 .

[38]  Juin J. Liou,et al.  Introductory invited paper On the extraction of the source and drain series resistances of MOSFETs , 1999 .

[39]  Y. W. Park,et al.  Additional resistance method for extraction of separated nonlinear parasitic resistances and effective mobility in MOSFETs , 2000 .

[40]  Juan Muci,et al.  A REVIEW OF DIODE AND SOLAR CELL EQUIVALENT CIRCUIT MODEL LUMPED PARAMETER EXTRACTION PROCEDURES , 2014 .

[41]  F.H. De La Moneda,et al.  Measurement of MOSFET constants , 1982, IEEE Electron Device Letters.

[42]  D. Lin,et al.  A Constant-Mobility Method to Enable MOSFET Series-Resistance Extraction , 2007, IEEE Electron Device Letters.

[43]  Juin J. Liou,et al.  Simple method for extracting the difference between the drain and source series resistances in MOSFETs , 1994 .

[44]  Adelmo Ortiz-Conde,et al.  Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction , 1998 .

[45]  이승준,et al.  MOSFET의 Effective Channel Length를 추출하기 위한 C-V 방법의 타당성 연구 , 2002 .

[46]  Ilgu Yun,et al.  Conduction instability of amorphous InGaZnO thin-film transistors under constant drain current stress , 2014, Microelectron. Reliab..

[47]  K. Terada,et al.  A New Method to Determine Effective MOSFET Channel Length , 1979 .

[48]  Adelmo Ortiz-Conde,et al.  Impact of multi-finger geometry on the extrinsic parasitic resistances of microwave MOSFETs , 2014, 2014 IEEE MTT-S International Microwave Symposium (IMS2014).

[49]  Adelmo Ortiz-Conde,et al.  EXTRACTING THE SERIES RESISTANCE AND EFFECTIVE CHANNEL LENGTH OF SHORT-CHANNEL MOSFETs AT LIQUID NITROGEN TEMPERATURE , 1994 .

[50]  Juin J. Liou,et al.  Analysis and design of MOSFETs , 1998 .

[51]  G.J. Hu,et al.  Gate-voltage-dependent effective channel length and series resistance of LDD MOSFET's , 1987, IEEE Transactions on Electron Devices.

[52]  Dong Myong Kim,et al.  Separate Extraction of Source, Drain, and Substrate Resistances in MOSFETs With Parasitic Junction Current Method , 2010, IEEE Electron Device Letters.

[53]  T. Grasser,et al.  MODELING OF HOT-CARRIER DEGRADATION BASED ON THOROUGH CARRIER TRANSPORT TREATMENT , 2014 .

[54]  Kazuo Terada,et al.  Reconsideration of effective channel length for metal–oxide–semiconductor field-effect transistor , 2014 .

[55]  F.J. Garcia Sanchez,et al.  Extraction of the bulk-charge effect parameter in MOSFETs , 2000, 2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400).

[56]  James A. Cooper,et al.  A new constant-current technique for MOSFET parameter extraction , 2005 .

[57]  R. F. Motta,et al.  A new method to determine MOSFET channel length , 1980, IEEE Electron Device Letters.

[58]  Adelmo Ortiz-Conde,et al.  Modeling the Impact of Multi-Fingering Microwave MOSFETs on the Source and Drain Resistances , 2014, IEEE Transactions on Microwave Theory and Techniques.

[59]  K.K. Ng,et al.  Measuring the effective channel length of MOSFETs , 1990, IEEE Circuits and Devices Magazine.

[60]  S. Jain.  Measurement of threshold voltage and channel length of submicron MOSFETs , 1988 .

[61]  M.I.H. King,et al.  A simple method to extract the asymmetry in parasitic source and drain resistances from measurements on a MOS transistor , 1995 .

[62]  John D. Cressler,et al.  A total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology , 1999 .

[63]  Guruprasad Kar,et al.  Series resistance and mobility degradation factor in C-incorporated SiGe heterostructure p-type metal–oxide semiconductor field-effect transistors , 2002 .

[64]  G. G. Stokes.  "J." , 1890, The New Yale Book of Quotations.

[65]  Kazuo Terada,et al.  Reconsideration of effective MOSFET channel length extracted from channel resistance , 2014, 2014 International Conference on Microelectronic Test Structures (ICMTS).

[66]  Deji Akinwande,et al.  On the mobility and contact resistance evaluation for transistors based on MoS2 or two-dimensional semiconducting atomic crystals , 2014 .

[67]  B. Jones,et al.  The apparent degradation of mobility in field-effect-device channels , 1986 .

[68]  Xiaoli Ji,et al.  The Comparison of Various S/D Series Resistances Methods for Deeply Submicron MOSFETs , 2014 .

[69]  Denis Flandre,et al.  A method to extract mobility degradation and total series resistance of fully-depleted SOI MOSFETs , 2002 .

[70]  G. Ghibaudo,et al.  A Lambert-Function Charge-Based Methodology for Extracting Electrical Parameters of Nanoscale FinFETs , 2012, IEEE Transactions on Electron Devices.

[71]  Juin J. Liou,et al.  Determination of gate-bias dependent source/drain series resistance and effective channel length for advanced MOS devices , 2006 .

[72]  Denis Flandre,et al.  Review on double-gate MOSFETs and FinFETs modeling , 2013 .

[73]  R.L. Johnston,et al.  Experimental derivation of the source and drain resistance of MOS transistors , 1980, IEEE Transactions on Electron Devices.

[74]  Juin J. Liou,et al.  Series resistance and effective channel length extraction of n-channel MOSFET at 77 K , 1994 .

[75]  Juin J. Liou,et al.  DETERMINATION OF PHYSICAL MECHANISMS CONTRIBUTING TO THE DIFFERENCE BETWEEN DRAIN AND SOURCE RESISTANCES IN SHORT-CHANNEL MOSFETs , 1996 .

[76]  Chenming Hu,et al.  Unified Compact Model Covering Drift-Diffusion to Ballistic Carrier Transport , 2016, IEEE Electron Device Letters.

[77]  Juin J. Liou,et al.  A unified look at the use of successive differentiation and integration in MOSFET model parameter extraction , 2015, Microelectron. Reliab..

[78]  M. J. Deen,et al.  Finding the asymmetric parasitic source and drain resistances from the a.c. conductances of a single MOS transistor , 1996 .

[79]  Y. Taur,et al.  A new 'shift and ratio' method for MOSFET channel-length extraction , 1992, IEEE Electron Device Letters.

[80]  Sung-Jin Choi,et al.  Dual-Sweep Combinational Transconductance Technique for Separate Extraction of Parasitic Resistances in Amorphous Thin-Film Transistors , 2015, IEEE Electron Device Letters.

[81]  Michael S. Shur,et al.  Semiconductor Device Modeling For VLSI , 1993 .

[82]  Juin J. Liou,et al.  A review of recent MOSFET threshold voltage extraction methods , 2002, Microelectron. Reliab..

[83]  Juin J. Liou,et al.  Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction , 2009, Microelectron. Reliab..

[84]  Sergio Bampi,et al.  Effective device electrical parameter extraction of nanoscale FinFETs: Challenges and results , 2015, 2015 27th International Conference on Microelectronics (ICM).

[85]  C. C. McAndrew,et al.  MOSFET effective channel length, threshold voltage, and series resistance determination by robust optimization , 1992 .

[86]  Yiming Li,et al.  Determination of Source-and-Drain Series Resistance in 16-nm-Gate FinFET Devices , 2015, IEEE Transactions on Electron Devices.