论文信息 - HiSIM2.4.0: Advanced MOSFET model for the 45nm Technology Node and Beyond - 字舞流文

HiSIM2.4.0: Advanced MOSFET model for the 45nm Technology Node and Beyond

Ryosuke Inagaki | Norio Sadachika | Tatsuya Ezaki | Hans Jurgen Mattausch | Masataka Miyake | S. Miyamoto | Dondee Navarro | M. Taguchi | Tatsuya Ohguro | M. Miura-Mattausch | Takahiro Iizuka | Y. Furui

[1] H. Grubin. The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.