Al0.48In0.52 As/Ga0.47In0.53 As/Al0.48In0.52As double‐heterostructure lasers grown by molecular‐beam epitaxy with lasing wavelength at 1.65 μm

The preparation and operation of lattice‐matched Al0.48Ga0.52As/Ga0.47In0.52As/Al0.48In0 .52As double‐heterostructure lasers lasing at 1.65 μm grown on InP substrates by molecular‐beam epitaxy are described. The present result represents the first current injection semiconductor laser ever fabricated from the Al0.48In0.52As/Ga0.47In0.53As/Al0.48In0 .52As double heterostructure. Broad‐area Fabry‐Perot laser (0.15‐μm‐thick Ga0.47In0.53As active layer) with pulsed current threshold density as low as 3.3 kA/cm2 has been obtained at room temperature and operated at heat‐sink temperatures as high as 115 °C studied. The threshold‐current temperature dependence has a characteristic temperature T0 of 70 °C in the temperature range of 25°–115 °C.

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