论文信息 - ENHANCED GROUP-V INTERMIXING IN INGAAS/INP QUANTUM WELLS STUDIED BY CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPY

ENHANCED GROUP-V INTERMIXING IN INGAAS/INP QUANTUM WELLS STUDIED BY CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPY

Cross-sectional scanning tunneling microscopy is used to study InGaAs/InP quantum-well intermixing produced by phosphorus implantation. When phosphorus ions are implanted in a cap layer in front of the quantum wells (in contrast to earlier work involving implantation through the wells), clear strain development is observed at the interfaces between quantum well and barrier layers after annealing. This is interpreted in terms of enhanced group-V compared to group-III interdiffusion.

[1] S. Ryu,et al. Determination of interdiffusion coefficients of cations and anions in InGaAs/InP superlattice , 1997 .

[2] R. Goldman,et al. Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy , 1998 .

[3] G. Hobler,et al. MODELING OF THE ION MASS EFFECT ON TRANSIENT ENHANCED DIFFUSION : DEVIATION FROM THE +1' MODEL , 1998 .

[4] Jian-Jun He,et al. Polarization insensitive InGaAs/InGaAsP/InP amplifiers using quantum well intermixing , 1996 .

[5] R. Feenstra,et al. Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors. , 1994, Physical review. B, Condensed matter.

[6] B. Weiss,et al. Effects of interdiffusion on the sub‐band‐edge structure of In0.53Ga0.47As/InP single quantum wells , 1993 .

[7] Andrew G. Glen,et al. APPL , 2001 .

[8] I. V. Mitchell,et al. A comparison of spectroscopic and microscopic observations of ion-induced intermixing in InGaAs/InP quantum wells , 1998 .

[9] J. Lambe,et al. Tunneling in Solids , 1973 .

[10] M. Buchanan,et al. Quantum-well intermixing for optoelectronic integration using high energy ion implantation , 1995 .

[11] Dennis G. Deppe,et al. Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures , 1988 .