论文信息 - Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques

Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques

A detailed investigation of the optical and electronic properties of the deep-level defect UD-4 is reported. This defect has recently been observed in 4H semi-insulating silicon carbide, but has hardly been studied yet. Both low temperature and temperature-dependent photoluminescence were collected from the defect. Zeeman spectroscopy measurements were performed as well as time-resolved photoluminescence.

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