Spatial variation of luminescence of InGaN alloys measured by highly-spatially-resolved scanning catholuminescence
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F. Ponce | S. Tanaka | J. Christen | F. Bertram | T. Riemann | Y. Nakagawa | S. Srinivasan | H. Omiya | L. Geng
[1] Fernando Ponce,et al. Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence , 2001 .
[2] Kazumi Wada,et al. Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes , 2000 .
[3] Fernando Ponce,et al. Depth-resolved electron-excited nanoscale-luminescence spectroscopy studies of defects near GaN/InGaN/GaN quantum wells , 1999 .
[4] C. Thomsen,et al. Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy , 1999 .
[5] Kazumi Wada,et al. Exciton localization in InGaN quantum well devices , 1998 .
[6] James S. Speck,et al. STRUCTURAL ORIGIN OF V-DEFECTS AND CORRELATION WITH LOCALIZED EXCITONIC CENTERS IN INGAN/GAN MULTIPLE QUANTUM WELLS , 1998 .
[7] Kazumi Wada,et al. Spatially resolved cathodoluminescence spectra of InGaN quantum wells , 1997 .