Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
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V. Djara | D. Caimi | J. Fompeyrine | M. Sousa | V. Deshpande | L. Czornomaz | C. Marchiori | E. Uccelli | C. Rossel | N. Dordevic
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