Modélisation et simulation numérique de phénomènes activés par la température : Application aux effets post-irradiation (PIE) : Composants électroniques soumis à ridiations

. The standardized test procedures applied to qualify radiation hardening for MOS components use an isothermal post-radiation burn-in process that accelerates ageing to reveal latent development of interface states and healing in the oxide charge. . An alternative is to use an isochronic burn-in process. For this process, the authors developed simulation software to model the electrical component of the threshold voltage due to the oxide charge.