Carrier transport simulator for silicon based on carrier distribution function evolutions

Abstract Momentum space electron distributions in bulk silicon were calculated by the direct integration of the Boltzmann transport equation. This approach formulates carrier transitions or “transactions” between discretized states in momentum space, based on physical processes, such as drift and phonon scattering. This method outperforms the Monte Carlo method in determining the distribution functions. This merit enables hot carrier analysis to be implemented with a smaller CPU time. The transient and steady-state distributions are explained by the existence of lucky electrons, energy dependent scattering rates and the isotropic nature of intervalley scattering.