A microstructure for thermal conductivity measurement of conductive thin films

Thermal properties of thin film materials used in the microelectro mechanical systems (MEMS) industry can differ from bulk materials. It is of great importance for numerous MEMS applications to have a precise knowledge of the thermal properties as they can influence device's final performance. We report on the design, the fabrication and the characterization of a MEMS structure for the measurement of thermal conductivity of conductive thin films. The thermal conductivity of titanium (Ti), indium tin oxide (ITO) and aluminum (Al) 500nm thin films has been investigated and found to be 16.8Wm^-^1K^-^1, 10.2Wm^-^1K^-^1 and 200Wm^-^1K^-^1, respectively, and are close to the thermal conductivity value of bulk materials.