论文信息 - A novel approach for determining the GaAs MESFET small-signal equivalent-circuit elements

A novel approach for determining the GaAs MESFET small-signal equivalent-circuit elements

A simple way of extracting the small-signal equivalent circuit of a MESFET is proposed. The intrinsic elements and one of the extrinsic parameters are described as functions of the remaining extrinsic parameters. This drastically reduces the search space and the number of unknowns for optimization. It provides an important new insight into the correlation between the various extrinsic and intrinsic parameters. The method also reveals that there are two sets of solution for the parameters R/sub s/ and L/sub s/ which can fully satisfy the global solution. A numerical comparison in terms of both accuracy and speed between the proposed method and some conventional methods on a 400-/spl mu/m gatewidth GaAs MESFET is presented.

[1] Naofumi Okubo,et al. GaAs MESFET characterization using least squares approximation by rational functions , 1993 .

[2] Fujiang Lin,et al. FET model parameter extraction based on optimization with multiplane data-fitting and bidirectional search-a new concept , 1994 .

[3] V. Sommer. A new method to determine the source resistance of FET from measured S-parameters under active-bias conditions , 1995 .

[4] G. Dambrine,et al. A new method for determining the FET small-signal equivalent circuit , 1988 .

[5] M. B. Das,et al. Accurate modeling of the source resistance in modulation-doped FETs , 1992 .

[6] Yoji Ohashi,et al. An approach to determining an equivalent circuit for HEMTs , 1995 .

[7] Manfred Berroth,et al. High-frequency equivalent circuit of GaAs FETs for large-signal applications , 1991 .

[8] K. Takahashi,et al. New modeling of GaAs MESFET's , 1983, IEEE Transactions on Electron Devices.

[9] S. Weinreb,et al. A note on experimental determination of small-signal equivalent circuit of millimeter-wave FETs , 1993 .