论文信息 - Structural defects and electrical conductivity in nanocrystalline SiC:H films doped with boron and grown by photostimulated chemical-vapor deposition - 字舞流文

Structural defects and electrical conductivity in nanocrystalline SiC:H films doped with boron and grown by photostimulated chemical-vapor deposition

M. Konagai | S. Myong | K. Lim | S. Miyajima | Oi Shevaleevskiy

[1] K. Lips,et al. The nature of dangling bond recombination in μc-Si:H , 2004 .

[2] Ki Hwan Kim,et al. Low-temperature preparation of boron-doped nanocrystalline SiC:H films using mercury-sensitized photo-CVD technique , 2004 .

[3] Seung Yeop Myong,et al. Improvement of pin-type amorphous silicon solar cell performance by employing double silicon-carbide p -layer structure , 2004 .

[4] S. Myong,et al. Spin defects and transport in hydrogenated nanocrystalline silicon carbide films produced by photo-CVD technique , 2003 .

[5] Euisik Yoon,et al. Electrical properties of photo-CVD boron-doped hydrogenated nanocrystalline silicon-carbide (p-nc-SiC : H) films for uncooled IR bolometer applications , 2003 .

[6] M. Stutzmann,et al. Spin-dependent processes in amorphous and microcrystalline silicon: a survey , 2000 .

[7] J. Müller,et al. Electronic properties of microcrystalline silicon investigated by electron spin resonance and transport measurements , 2000 .

[8] Yoshihiro Hamakawa,et al. Valency Control of Glow Discharge Produced a-SiC:H and its Application to Heterojunction Solar Cells , 1982 .