论文信息 - Comparison between vertical silicon NW-TFET and NW-MOSFETfrom analog point of view

Comparison between vertical silicon NW-TFET and NW-MOSFETfrom analog point of view

In this work a comparison of the analog performance between vertical silicon Nanowires Tunnel Field Effect Transistors (NW-TFETs) and nanowires MOSFETs (NW-MOSFETs) is performed mainly focusing on the basic analog characteristics at room and high temperatures for the first time. The opposite transconductance trend as a function of temperature and the much lower (better) output conductance obtained for NW-TFETs when compared to NW-MOSFETs contribute to an important improvement of the intrinsic voltage gain, making the NW-TFETs a good alternative for analog applications.

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