Proposal for (110) InAs/GaSb superlattices for infrared detection
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[1] A. Mascarenhas,et al. Electronic and optical properties of laterally composition-modulated Al x In 1-x As, Ga x In 1-x P, and Ga x In 1-x As alloys , 1998 .
[2] J. Wendler,et al. 256×256 focal plane array midwavelength infrared camera based on InAs/GaSb short-period superlattices , 2005 .
[3] Jason M. Mumolo,et al. MBE grown type-II MWIR and LWIR superlattice photodiodes , 2007 .
[4] Darryl L. Smith,et al. Proposal for strained type II superlattice infrared detectors , 1987 .
[5] Michael A. Kinch. High-operating-temperature (HOT) detector requirements , 2001, SPIE Optics + Photonics.
[6] Antoni Rogalski,et al. InAs/GaInSb superlattices as a promising material system for third generation infrared detectors , 2005, Other Conferences.
[7] Los,et al. Generalization of the k , 1996, Physical review. B, Condensed matter.
[8] Manijeh Razeghi,et al. On the performance and surface passivation of type II InAs∕GaSb superlattice photodiodes for the very-long-wavelength infrared , 2005 .
[9] T. Nee,et al. Quantum Spectroscopy of the Low-Field Oscillations in the Surface Impedance , 1968 .
[10] Martin Walther,et al. Passivation of InAs∕(GaIn)Sb short-period superlattice photodiodes with 10μm cutoff wavelength by epitaxial overgrowth with AlxGa1−xAsySb1−y , 2005 .
[11] Frank Fuchs,et al. Investigation of trap-assisted tunneling current in InAs/(GaIn)Sb superlattice long-wavelength photodiodes , 2002 .
[12] P. Stavrinou,et al. General rules for constructing valence band effective mass Hamiltonians with correct operator order for heterostructures with arbitrary orientations , 1998 .
[13] Bruno Ullrich,et al. Interfaces as design tools for short-period InAs/GaSb type-II superlattices for mid-infrared detectors , 2005, Optics + Optoelectronics.
[14] M. S. Singh,et al. Influence of substrate composition and crystallographic orientation on the band structure of pseudomorphic Si-Ge alloy films. , 1990, Physical review. B, Condensed matter.
[15] B. Nag. Interface roughness scattering limited mobility in AlAs/GaAs, Al0.3Ga0.7As/GaAs and Ga0.5In0.5P/GaAs quantum wells , 2004 .
[16] M. Yoshita,et al. Low and anisotropic barrier energy for adatom migration on a GaAs (110) surface studied by first-principles calculations , 2003 .
[17] Manijeh Razeghi,et al. High differential resistance type-II InAs∕GaSb superlattice photodiodes for the long-wavelength infrared , 2006 .
[18] M. Razeghi,et al. Uncooled operation of type-II InAs∕GaSb superlattice photodiodes in the midwavelength infrared range , 2005 .
[19] D. Duda,et al. Spin lifetime of (In,Ga)As/GaAs (110) quantum wells , 2007 .
[20] R. Hengehold,et al. Intersubband infrared absorption spectra of Si/Si 1-x Ge x quantum wells grown in the [110] direction , 2002 .
[21] Krishnamurthy Mahalingam,et al. Optimization of mid-infrared InAs∕GaSb type-II superlattices , 2004 .
[22] Krishnamurthy Mahalingam,et al. Band gap tuning of InAs∕GaSb type-II superlattices for mid-infrared detection , 2004 .
[23] Gold. Electronic transport properties of a two-dimensional electron gas in a silicon quantum-well structure at low temperature. , 1987, Physical review. B, Condensed matter.
[24] Yajun Wei,et al. Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes , 2004 .
[25] Scheffler,et al. Calculated atomic structures and electronic properties of GaP, InP, GaAs, and InAs (110) surfaces. , 1991, Physical review. B, Condensed matter.
[26] Jeffrey H. Warner,et al. W-structured type-II superlattice long-wave infrared photodiodes with high quantum efficiency , 2006 .
[27] X. Han,et al. A model for scattering due to interface roughness in finite quantum wells , 2005 .
[28] H. Sakaki,et al. Interface roughness scattering in GaAs/AlAs quantum wells , 1987 .
[29] R. Henderson,et al. Strain and crystallographic orientation effects on interband optical matrix elements and band gaps of [11l ]‐oriented III‐V epilayers , 1995 .
[30] Yajun Wei,et al. Capacitance-voltage investigation of high-purity InAs∕GaSb superlattice photodiodes , 2006 .
[31] Martin Walther,et al. High performance InAs/Ga1-xInxSb superlattice infrared photodiodes , 1997 .
[32] Gail J. Brown,et al. Effect of interfaces and the spin-orbit band on the band gaps of InAs/GaSb superlattices beyond the standard envelope-function approximation , 2004 .
[33] B. Nag,et al. Interface roughness scattering-limited electron mobility in AlAs/GaAs and Ga0.5In0.5P/GaAs wells , 1999 .
[34] Frank Fuchs,et al. Optoelectronic properties of photodiodes for the mid-and far-infrared based on the InAs/GaSb/AlSb materials family , 2001, SPIE OPTO.
[35] Hole subbands and effective masses in p-doped , 1995, Physical review. B, Condensed matter.
[36] Y. Takano,et al. Realization of low facet density and the growth mechanism of GaAs on GaAs(110) by migration‐enhanced epitaxy , 1991 .
[37] Gail J. Brown,et al. Demonstration of interface-scattering-limited electron mobilities in InAs∕GaSb superlattices , 2007 .
[38] L. Peng. Strain dependence of hole mass and optical anisotropy in (110) quantum wells , 1997 .
[39] Jeffrey H. Warner,et al. Graded band gap for dark-current suppression in long-wave infrared W-structured type-II superlattice photodiodes , 2006 .
[40] Ma,et al. Band structure and symmetry analysis of coherently grown Si1-xGex alloys on oriented substrates. , 1993, Physical review. B, Condensed matter.
[41] Bruno Ullrich,et al. Short-period InAs∕GaSb type-II superlattices for mid-infrared detectors , 2005 .
[42] Spin relaxation in [110] and [001] InAs/GaSb superlattices , 2003, Postconference Digest Quantum Electronics and Laser Science, 2003. QELS..
[43] Frank Fuchs,et al. Control of the residual doping of InAs/(GaIn)Sb infrared superlattices , 2000 .
[44] W. Li,et al. Type-II InAs/GaSb superlattices grown on GaSb (311)B by molecular beam epitaxy for long-wavelength infrared applications , 2006 .