Scintillation characteristics of (Gd1-x,Cex)2Si2O7 (x = 0.025 − 0.25 ) single crystals fabricated by floating zone method
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S. Nishiyama | S. Kawamura | J. Kaneko | F. Fujita | A. Homma | M. Furusaka | K. Kurashige | H. Ishibashi | M. Higuchi | J. Haruna | S. Saeki | S. Ueda