High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AlN interlayers.
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Dominique Schreurs | Kang-Hoon Choi | Gustaaf Borghs | Wouter Ruythooren | Marianne Germain | Stefan Degroote | Wenfei Wang | Benny Van Daele | D. Schreurs | G. Borghs | M. Germain | G. Tendeloo | M. Leys | W. Ruythooren | Kang-Hoon Choi | S. Degroote | Maarten Leys | Gustaaf Van Tendeloo | Steven Boeykens | Wenfei Wang | S. Boeykens | B. V. Daele
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