论文信息 - Single-Event Burnout Hardness for the 4H-SiC Trench-Gate MOSFETs Based on the Multi-Island Buffer Layer - 字舞流文

Single-Event Burnout Hardness for the 4H-SiC Trench-Gate MOSFETs Based on the Multi-Island Buffer Layer

Jianqun Yang | Ying Wang | Cheng-Hao Yu | Fei Cao | Xue Wu | Xing-ji Li | Mengtian Bao | M. Lin | Chenghao Yu | Meng-tian Bao