Extraction of trap location and energy from random telegraph noise in amorphous TiOx resistance random access memories
暂无分享,去创建一个
Hyuck-In Kwon | Jong-Ho Lee | Sung-Joo Hong | Sung-Woong Chung | Jin Won Park | Jae Sung Roh | Sung-Joo Hong | Jong-Ho Lee | Sung-Woong Chung | J. Roh | J. Park | I. Cho | H. Kwon | Ju-Wan Lee | Ju-Wan Lee | Jung-Kyu Lee | Jung-Kyu Lee | Ilwhan Cho | Sungwoong Chung
[1] M. J. Kirton,et al. Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise , 1989 .
[2] Chih-Tang Sah,et al. Models and experiments on degradation of oxidized silicon , 1987 .
[3] C. Hwang,et al. First-principles study of point defects in rutileTiO2−x , 2006 .
[4] Rainer Waser,et al. Probing Cu doped Ge0.3Se0.7 based resistance switching memory devices with random telegraph noise , 2010 .
[5] Sung-Jin Choi,et al. Highly durable and flexible memory based on resistance switching , 2010 .
[6] Sung-Yool Choi,et al. Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films , 2009 .
[7] Kazuhiko Matsumoto,et al. Room temperature operation of a single electron transistor made by the scanning tunneling microscope nanooxidation process for the TiOx/Ti system , 1996 .
[8] D. Ielmini,et al. Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories , 2010 .
[9] P.K. Ko,et al. Random telegraph noise of deep-submicrometer MOSFETs , 1990, IEEE Electron Device Letters.
[10] C. Gerber,et al. Reproducible switching effect in thin oxide films for memory applications , 2000 .
[11] Ti/TiOx single-electron devices produced with a step-edge-cut-off (SECO) method , 2000 .
[12] B. Irmer,et al. Fabrication of Ti/TiOx tunneling barriers by tapping mode atomic force microscopy induced local oxidation , 1997 .