论文信息 - Optimization of high Q CMOS-compatible microwave inductors using silicon CMOS technology

Optimization of high Q CMOS-compatible microwave inductors using silicon CMOS technology

We present the extensive experimental results showing the important dependences of layout parameters on RF performance of rectangular spiral inductors, in order to determine the optimized layout parameters for designing the high Q inductors used in RF ICs at 2 GHz. The detailed comparative analysis is also carried out to investigate substrate effects by varying the substrate resistivity.

Hyun Kyu Yu | Min Park | Seonghearn Lee | Kee Soo Nam

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