1.55-$\mu$m Range InAs–InP (100) Quantum-Dot Fabry–Pérot and Ring Lasers Using Narrow Deeply Etched Ridge Waveguides

In this letter, we report on the fabrication and characterization of InAs-InP (100) quantum-dot (QD) Fabry-Perot and ring lasers, lasing in the 1.55-mum wavelength range and employing narrow deeply etched ridge waveguides (1.65 mum width). The performance of the lasers appears not affected by sidewall recombination effects of the deeply etched waveguide structure. Narrow deeply etched ridge waveguides can be mono-mode and allow for a small bending radius to realize compact integrated devices. As a demonstration, we present results on a compact ring laser with a free spectral range close to 40 GHz. Due to the low absorption of the QDs, unpumped output waveguides can be used

[1]  G. Griffel,et al.  Low-threshold InGaAsP ring lasers fabricated using bi-level dry etching , 2000, IEEE Photonics Technology Letters.

[2]  Y. Arakawa,et al.  Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gb s−1 directly modulated lasers and 40 Gb s−1 signal-regenerative amplifiers , 2005, 2006 Optical Fiber Communication Conference and the National Fiber Optic Engineers Conference.

[3]  Meint Meint Smit,et al.  Ultrafast InP optical integrated circuits , 2006, SPIE OPTO.

[4]  Nikolai N. Ledentsov,et al.  Direct modulation and mode locking of 1.3 μm quantum dot lasers , 2004 .

[5]  Sanguan Anantathanasarn,et al.  Stacking and polarization control of wavelength-tunable (1.55 mum region) InAs/InGaAsP/InP (100) quantum dots , 2006 .

[6]  N. Ledentsov,et al.  Optical spectroscopy of self-organized nanoscale hetero-structures involving high-index surfaces , 1995 .

[7]  Luke F. Lester,et al.  Highly unidirectional InAs∕InGaAs∕GaAs quantum-dot ring lasers , 2005 .

[8]  L. O'Faolain,et al.  Reduced surface sidewall recombination and diffusion in quantum-dot lasers , 2006, IEEE Photonics Technology Letters.

[9]  Y Yohan Barbarin,et al.  Lasing of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots grown by metal organic vapor-phase epitaxy , 2006 .

[10]  N. V. Kryzhanovskaya,et al.  High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates , 2004 .

[11]  A. R. Kovsh,et al.  LETTER TO THE EDITOR: High performance narrow stripe quantum-dot lasers with etched waveguide , 2003 .