Carrier localization in InN/InGaN multiple-quantum wells with high In-content

We study the carrier localization in InN/In0.9Ga0.1N multiple-quantum-wells (MQWs) and bulk InN by means of temperature-dependent photoluminescence and pump-probe measurements at 1.55 μm. The S-shaped thermal evolution of the emission energy of the InN film is attributed to carrier localization at structural defects with an average localization energy of ∼12 meV. Carrier localization is enhanced in the MQWs due to well/barrier thickness and ternary alloy composition fluctuations, leading to a localization energy above 35 meV and longer carrier relaxation time. As a result, the luminescence efficiency in the MQWs is improved by a factor of five over bulk InN.

[1]  F. Julien,et al.  Infrared photoluminescence of high In‐content InN/InGaN multiple‐quantum‐wells , 2012 .

[2]  Y. Kotsar,et al.  Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy , 2011 .

[3]  E. Luna,et al.  InN/InGaN multiple quantum wells emitting at 1.5 μm grown by molecular beam epitaxy , 2011 .

[4]  J. A. Méndez,et al.  Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths , 2011 .

[5]  A. T. Kalghatgi,et al.  Droplet Epitaxy of InN Quantum Dots on Si(111) by RF Plasma-Assisted Molecular Beam Epitaxy , 2010 .

[6]  C.-C. Hong,et al.  Carrier dynamics of Mg-doped indium nitride , 2010, OPTO.

[7]  Y. H. Chen,et al.  Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films , 2010 .

[8]  Chi‐Kuang Sun,et al.  Observation of sub-100 femtosecond electron cooling time in InN , 2010 .

[9]  Junqiao Wu,et al.  When group-III nitrides go infrared: New properties and perspectives , 2009 .

[10]  Juliette Mangeney,et al.  Ultrafast relaxation and optical saturation of intraband absorption of GaN/AlN quantum dots , 2009 .

[11]  Xiaodong Wang,et al.  Fabrication and properties of coherent-structure In-polarity InN∕In0.7Ga0.3N multiquantum wells emitting at around 1.55μm , 2007 .

[12]  Tsong-Ru Tsai,et al.  Ultrafast hot electron relaxation time anomaly in InN epitaxial films , 2007 .

[13]  Miguel Gonzalez-Herraez,et al.  Third order nonlinear susceptibility of InN at near band-gap wavelengths , 2007 .

[14]  Petter Holmström,et al.  High structural quality InN∕In0.75Ga0.25N multiple quantum wells grown by molecular beam epitaxy , 2006 .

[15]  C. Y. Chen,et al.  Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy , 2006 .

[16]  Christoph Adelmann,et al.  Plastic strain relaxation of nitride heterostructures , 2004 .

[17]  N. Gogneau,et al.  Molecular-beam epitaxial growth and characterization of quaternary III–nitride compounds , 2003 .

[18]  P. Ruterana,et al.  HREM study of stacking faults in GaN layers grown over sapphire substrate , 2000 .

[19]  A. Haug.  Carrier density dependence of Auger recombination , 1978 .

[20]  J. Massies,et al.  Reduction of carrier in-plane mobility in group-III nitride based quantum wells : The role of internal electric fields , 2001 .