Area-Selective Atomic Layer Deposition for Resistive Random-Access Memory Devices.

Resistive random-access memory (RRAM) is a promising technology for data storage and neuromorphic computing; however, cycle-to-cycle and device-to-device variability limits its widespread adoption and high-volume manufacturability. Improving the structural accuracy of RRAM devices during fabrication can reduce these variabilities by minimizing the filamentary randomness within a device. Here, we studied area-selective atomic layer deposition (AS-ALD) of the HfO2 dielectric for the fabrication of RRAM devices with higher reliability and accuracy. Without requiring photolithography, first we demonstrated ALD of HfO2 patterns uniformly and selectively on Pt bottom electrodes for RRAM but not on the underlying SiO2/Si substrate. RRAM devices fabricated using AS-ALD showed significantly narrower operating voltage range (2.6 × improvement) and resistance states than control devices without AS-ALD, improving the overall reliability of RRAM. Irrespective of device size (1 × 1, 2 × 2, and 5 × 5 μm2), we observed similar improvement, which is an inherent outcome of the AS-ALD technique. Our demonstration of AS-ALD for improved RRAM devices could further encourage the adoption of such techniques for other data storage technologies, including phase-change, magnetic, and ferroelectric RAM.

[1]  S. Bent,et al.  Role of Precursor Choice on Area-Selective Atomic Layer Deposition , 2021 .

[2]  Wei D. Lu,et al.  Filament‐Free Bulk Resistive Memory Enables Deterministic Analogue Switching , 2020, Advanced materials.

[3]  Farooq Ahmad Khanday,et al.  Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications , 2020, Nanoscale Research Letters.

[4]  S. Bent,et al.  Mechanistic Study of Nucleation Enhancement in Atomic Layer Deposition by Pretreatment with Small Organometallic Molecules , 2019, Chemistry of Materials.

[5]  W. Kessels,et al.  From the Bottom-Up: Toward Area-Selective Atomic Layer Deposition with High Selectivity† , 2018, Chemistry of materials : a publication of the American Chemical Society.

[6]  G. Leusink,et al.  Perspective: New process technologies required for future devices and scaling , 2018 .

[7]  S. Bent,et al.  Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation , 2017, Chemistry of materials : a publication of the American Chemical Society.

[8]  Byung Chul Yeo,et al.  Reaction Mechanism of Area-Selective Atomic Layer Deposition for Al2O3 Nanopatterns. , 2017, ACS applied materials & interfaces.

[9]  E. Pérez,et al.  Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance , 2016, Scientific Reports.

[10]  L. Goux,et al.  Causes and consequences of the stochastic aspect of filamentary RRAM , 2015 .

[11]  M. Fang,et al.  Area-Selective Atomic Layer Deposition: Conformal Coating, Subnanometer Thickness Control, and Smart Positioning. , 2015, ACS nano.

[12]  D. Ielmini,et al.  Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories , 2011, Nanotechnology.

[13]  S. Bent,et al.  Area-Selective ALD with Soft Lithographic Methods: Using Self-Assembled Monolayers to Direct Film Deposition , 2009 .

[14]  Jiyoung Kim,et al.  Random and localized resistive switching observation in Pt/NiO/Pt , 2007 .

[15]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[16]  Stacey F. Bent,et al.  Chemistry for Positive Pattern Transfer Using Area‐Selective Atomic Layer Deposition , 2006 .

[17]  S. Bent,et al.  Achieving area-selective atomic layer deposition on patterned substrates by selective surface modification , 2005 .

[18]  Hyunsang Hwang,et al.  Effect of Nitrogen Doping on Variability of TaOx -RRAM for Low-Power 3-Bit MLC Applications , 2015 .