Mound formation in surface growth under shadowing

In this paper we report on the morphological evolution of thin films grown by commonly employed deposition techniques, such as sputtering and chemical vapor deposition. In these deposition techniques, an angular distribution of incident particle flux leads to the shadowing effect, which often plays an important role in defining the growth front morphology. We show both by simulations and experiments that a mounded structure can be formed with a characteristic length scale, or “wavelength” , which describes the separation of the mounds. We also show that the temporal evolution of is distinctly different from that of the mound size or lateral correlation length . The wavelength grows as a function of time in a power-law form, t p , where p0.5 for a wide range of growth conditions, while the mound size grows as t 1/z , where 1/z varies depending on growth conditions. The existence of these two length scales and their different growth rates leads to a breakdown of the self-affine and dynamic scaling hypotheses that have been used to describe many surface growth phenomena in the past.

[1]  Evidence for power-law dominated noise in vacuum deposited CaF2. , 2004, Physical review letters.

[2]  Alain Marty,et al.  Instabilities in crystal growth by atomic or molecular beams , 2000 .

[3]  Guo,et al.  Shadowing instability in three dimensions. , 1993, Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics.

[4]  T. Karabacak,et al.  Breakdown of dynamic scaling in surface growth under shadowing. , 2006, Physical review letters.

[5]  Martin Siegert,et al.  COARSENING DYNAMICS OF CRYSTALLINE THIN FILMS , 1998 .

[6]  N. Suresh,et al.  A comparison of nucleation and growth investigations of thin films using scanning tunneling microscopy, atomic force microscopy and X-ray scattering , 2000 .

[7]  Gwo-Ching Wang,et al.  Surface roughening in shadowing growth and etching in 2¿1 dimensions , 2000 .

[8]  T. Karabacak,et al.  Growth front roughening in silicon nitride films by plasma-enhanced chemical vapor deposition , 2002 .

[9]  A. Barabasi,et al.  Fractal concepts in surface growth , 1995 .

[10]  Tamás Vicsek,et al.  Scaling of the active zone in the Eden process on percolation networks and the ballistic deposition model , 1985 .

[11]  A. Barabasi,et al.  Fractal Concepts in Surface Growth: Frontmatter , 1995 .

[12]  David M. Tanenbaum,et al.  Surface roughening during plasma-enhanced chemical-vapor deposition of hydrogenated amorphous silicon on crystal silicon substrates , 1997 .

[13]  Dynamics of rough interfaces in chemical vapor deposition: experiments and a model for silica films , 2000, Physical review letters.

[14]  D. Moldovan,et al.  Interfacial coarsening dynamics in epitaxial growth with slope selection , 2000, Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics.

[15]  Roland,et al.  Interfacial dynamics with long-range screening. , 1992, Physical Review A. Atomic, Molecular, and Optical Physics.

[16]  F. Family Scaling of rough surfaces: effects of surface diffusion , 1986 .

[17]  Sander,et al.  Stable and unstable growth in molecular beam epitaxy. , 1994, Physical review letters.

[18]  Shaw,et al.  Scaling theory for the growth of amorphous films. , 1990, Physical review letters.

[19]  Morphology transition during low-pressure chemical vapor deposition. , 2001, Physical review letters.

[20]  J. Wendelken,et al.  EVOLUTION OF MOUND MORPHOLOGY IN REVERSIBLE HOMOEPITAXY ON CU(100) , 1997 .

[21]  A. Silfhout,et al.  Kinetic roughening of vicinal Si( 001) , 1994 .

[22]  Toh-Ming Lu,et al.  Characterization of Amorphous and Crystalline Rough Surface: Principles and Applications , 2001 .

[23]  Krug,et al.  Scaling structure in simple screening models for columnar growth. , 1992, Physical review. A, Atomic, molecular, and optical physics.

[24]  Toh-Ming Lu,et al.  Growth-front roughening in amorphous silicon films by sputtering , 2001 .