Initial stages of the epitaxial growth of Pr2O3 on Si(111) studied by LEED and STM
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[1] C. Wenger,et al. Structure and strain relaxation mechanisms of ultrathin epitaxial Pr2O3 films on Si(111) , 2005 .
[2] H. Osten,et al. Epitaxial growth of praseodymium oxide on silicon , 2001 .
[3] H. Osten,et al. Epitaxial growth of Pr2O3 on Si(111) and the observation of a hexagonal to cubic phase transition during postgrowth N2 annealing , 2001 .
[4] Nakayama,et al. Mechanism of epitaxial growth of monolayer CaF on Si(111)-(7 x 7). , 1994, Physical review letters.
[5] J. Speck,et al. Pulsed laser deposition of epitaxial silicon/h‐Pr2O3/silicon heterostructures , 1993 .
[6] M. Lagally,et al. Scanning tunneling microscopy studies of structural disorder and steps on Si surfaces , 1989 .
[7] Chadi,et al. Si(111)-7 x 7 surface: Energy-minimization calculation for the dimer-adatom-stacking-fault model. , 1987, Physical review. B, Condensed matter.
[8] L. Eyring,et al. Structural transformation and chemical reduction of Pr24O44 induced by the electron beam during microscopical examination , 1987 .
[9] Masaetsu Takahashi,et al. Structure analysis of si(111)-7×7 reconstructed surface by transmission electron diffraction , 1985 .
[10] Richard L. Schwoebel,et al. Step Motion on Crystal Surfaces. II , 1966 .