Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure
暂无分享,去创建一个
S. Im | J. Kim | Jae Hoon Kim | Seongil Im | I. Jeong | I. S. Jeong | I.-S. Jeong | Jae Hoon Kim
[1] M. Razeghi,et al. High-quality visible-blind AlGaN p-i-n photodiodes , 1999 .
[2] T. Skettrup,et al. Ultraviolet detectors in thin sputtered ZnO films. , 1986, Applied optics.
[3] Manijeh Razeghi,et al. Semiconductor ultraviolet detectors , 1996 .
[4] J. Y. Lee,et al. Photoresponse characteristics of n-ZnO/p-Si heterojunction photodiodes , 2002 .
[5] Holly A. Marsh,et al. Back-illuminated GaN/AlGaN heterojunction photodiodes with high quantum efficiency and low noise , 1998 .
[6] Peter P. Chow,et al. Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy , 1997 .
[7] H. Yeom,et al. Optimum Thickness of SiO2 Layer Formed at the Interface of N-ZnO/P-Si Photodiodes , 2002 .
[8] J. Y. Lee,et al. Characterization of films and interfaces in n-ZnO/p-Si photodiodes , 2002 .
[9] Hongen Shen,et al. ZnO Schottky ultraviolet photodetectors , 2001 .
[10] S. M. Sze,et al. Physics of semiconductor devices , 1969 .