Compact Modeling of RRAM Devices and Its Applications in 1T1R and 1S1R Array Design

In this paper, we present a compact model for metal-oxide-based resistive random access memory (RRAM) devices with bipolar switching characteristics. The switching mechanism relies on the dynamics of conductive filament growth/dissolution in the oxide layer. Besides the dc and pulsed I-V characteristics, the model also captures the RRAM retention property and the temperature dynamics. The model parameters and the device variations are calibrated from the experimental data of IMEC HfOx-based RRAM devices. The model has been implemented in Verilog-A, which can be easily adapted into the SPICE simulator for the circuit-level analysis. As case studies, we demonstrate the model's applications on the programming scheme design of the 1-transistor-1-resistor array, as well as the design space exploration of the 1-selector-1-resistor cross-point array toward megabit-level.

[1]  Eilam Yalon,et al.  Thermometry of Filamentary RRAM Devices , 2015, IEEE Transactions on Electron Devices.

[2]  R. Fang,et al.  Low-Temperature Characteristics of HfOx-Based Resistive Random Access Memory , 2015, IEEE Electron Device Letters.

[3]  S. Jo,et al.  3D-stackable crossbar resistive memory based on Field Assisted Superlinear Threshold (FAST) selector , 2014, 2014 IEEE International Electron Devices Meeting.

[4]  Dimitri Linten,et al.  Dynamic Modeling of Radiation-Induced State Changes in ${\hbox {HfO}_2}/\hbox {Hf}$ 1T1R RRAM , 2014, IEEE Transactions on Nuclear Science.

[5]  Shimeng Yu,et al.  Verilog-A compact model for oxide-based resistive random access memory (RRAM) , 2014, 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

[6]  P. Narayanan,et al.  Access devices for 3D crosspoint memorya) , 2014 .

[7]  Gennadi Bersuker,et al.  A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis , 2014, IEEE Transactions on Electron Devices.

[8]  Jiantao Zhou,et al.  Crossbar RRAM Arrays: Selector Device Requirements During Write Operation , 2014, IEEE Transactions on Electron Devices.

[9]  Guido Groeseneken,et al.  Selector design considerations and requirements for 1 SIR RRAM crossbar array , 2014, 2014 IEEE 6th International Memory Workshop (IMW).

[10]  T. Cabout,et al.  Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories , 2014, IEEE Transactions on Electron Devices.

[11]  Dimitri Linten,et al.  Dynamic modeling of radiation induced state change in HfO2/Hf 1T1R RRAM , 2014 .

[12]  Masahide Matsumoto,et al.  A 130.7-$\hbox{mm}^{2}$ 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology , 2014, IEEE Journal of Solid-State Circuits.

[13]  Kuk-Hwan Kim,et al.  Crossbar RRAM Arrays: Selector Device Requirements During Read Operation , 2014, IEEE Transactions on Electron Devices.

[14]  L. Goux,et al.  Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current , 2013, 2013 IEEE International Electron Devices Meeting.

[15]  B. Gao,et al.  A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations , 2013, IEEE Transactions on Electron Devices.

[16]  L. Goux,et al.  Intrinsic switching variability in HfO2 RRAM , 2013, 2013 5th IEEE International Memory Workshop.

[17]  Zongliang Huo,et al.  Compact analytical models for the SET and RESET switching statistics of RRAM inspired in the cell-based percolation model of gate dielectric breakdown , 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

[18]  An Chen,et al.  A Comprehensive Crossbar Array Model With Solutions for Line Resistance and Nonlinear Device Characteristics , 2013, IEEE Transactions on Electron Devices.

[19]  Yukio Hayakawa,et al.  An 8 Mb Multi-Layered Cross-Point ReRAM Macro With 443 MB/s Write Throughput , 2012, IEEE Journal of Solid-State Circuits.

[20]  K. Virwani,et al.  Sub-30nm scaling and high-speed operation of fully-confined Access-Devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC) materials , 2012, 2012 International Electron Devices Meeting.

[21]  Shimeng Yu,et al.  A neuromorphic visual system using RRAM synaptic devices with Sub-pJ energy and tolerance to variability: Experimental characterization and large-scale modeling , 2012, 2012 International Electron Devices Meeting.

[22]  L. Goux,et al.  Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM , 2012, IEEE Transactions on Electron Devices.

[23]  Shimeng Yu,et al.  A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations , 2012, IEEE Electron Device Letters.

[24]  Hyunsang Hwang,et al.  Varistor-type bidirectional switch (JMAX>107A/cm2, selectivity∼104) for 3D bipolar resistive memory arrays , 2012, 2012 Symposium on VLSI Technology (VLSIT).

[25]  Shimeng Yu,et al.  Metal–Oxide RRAM , 2012, Proceedings of the IEEE.

[26]  Shimeng Yu,et al.  A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory , 2012 .

[27]  D. Ielmini,et al.  Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth , 2011, IEEE Transactions on Electron Devices.

[28]  Tuo-Hung Hou,et al.  Bipolar Nonlinear $\hbox{Ni/TiO}_{2}\hbox{/}\hbox{Ni}$ Selector for 1S1R Crossbar Array Applications , 2011, IEEE Electron Device Letters.

[29]  Hisashi Shima,et al.  Resistive Random Access Memory (ReRAM) Based on Metal Oxides , 2010, Proceedings of the IEEE.

[30]  Jiale Liang,et al.  Cross-Point Memory Array Without Cell Selectors—Device Characteristics and Data Storage Pattern Dependencies , 2010, IEEE Transactions on Electron Devices.

[31]  Lifeng Liu,et al.  Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory , 2009, IEEE Electron Device Letters.

[32]  J. McPherson,et al.  Thermochemical description of dielectric breakdown in high dielectric constant materials , 2003 .

[33]  J. Lambert.  Numerical Methods for Ordinary Differential Equations , 1991 .